Disclosed is a method of manufacturing a silicon carbide semiconductor apparatus which provides a smooth silicon carbide surface while maintaining a high impurity activation ratio. Several qualitative evaluations may be determined from analysis of test code in compiled or source form, including evaluating descriptive assertions made by the test code, dependency evaluations, cyclomatic complexity evaluations, return value assertions, mutable parameter assertions, and test effectiveness history. If executing the first level detection algorithm indicates that the current observation or observation aggregate warrants a second level examination, the method continues by processing the current observation or observation aggregate through at least one second level detection algorithms to provide a more definite, fine grain indication of a possible intrusion. It is detected whether there are any errors in the data written to the one or more magnetic memory cells. Resin members 14a and 15a made of an elastic material having comparatively high rigidity are attached to parts, to be brought into contact with the substrate 51, of the pressure bar 14 and the edge holder 15, respectively. The second switch circuit includes plural second switches coupled to a forward end and a reverse end of the diode circuit respectively, wherein the second switch circuit determines whether to conduct the forward end or the reverse end to the current source circuit according to the voltages of the forward end and the reverse end.