Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. 01 to about 25 weight percent on a basis of total resin solids of an amphiphilic adjuvant having an acid value of less than 30, a water-soluble polar end including at least one terminal hydroxyl group and a water-insoluble hydrocarbon end including at least seven contiguous carbon atoms. Between the base station and said coupling elements the transfer of data and energy is contactless, and preferably by capacitive coupling.