Systems, methods, and memory device with row lines and column lines arranged in a matrix configuration with a memory cell coupled to one of the column lines and one of the row lines. In the cutting tap, a first cutting edge portion for processing a prepared hole is formed at a front end surface of the lead, and a second cutting edge portion for finishing a minor diameter of an internal thread is formed in a part of an outer periphery of the complete thread portion, the second cutting edge portion being one or more pitches long. When the wordline is active, the output of the circuit applies a voltage near VDD to the positive voltage supply node of the memory cells. \u03b8 is the acceptance angle being defined as the half angle of the acceptance cone of the fiber at its proximal end. A second resonance frequency determined by at least the equivalent parallel capacitor C0 and the inductor L2 is Fp. The substrate is immersed in the solution being heated by a heating device mounted on a bottom of an electroless plating reactor while the heated solution being cooled by a cooling device provided in the reactor, and thus a seed layer is formed the patterned surface of the substrate.