A communication system, reception apparatus and method, recording medium and program are provided. The method includes determining a catalyst parameter indicative of a conversion efficiency of the exhaust treatment device. As a key step of this invention, a dielectric layer is capped over the interlevel dielectric layer to smooth the corner and avoid microscratch thereon when performing chemical mechanical polishing process. Because this region does not deplete the hot carriers flowing through it lose energy and therefore are less likely to be trapped by interface traps at the insulator oxide interface or in the bulk dielectric. An embodiment FinFET includes a fin supported by a semiconductor substrate, the fin extending between a source and a drain and having a channel region, and a gate stack formed over the channel region of the fin, the gate stack including an N work function metal layer comprising an oxidation layer on opposing sides of a tantalum aluminide carbide layer. The use of an MSC reduces the number of components on a PC board which may reduce the complexity, cost and size of the PC board.