Wafer surfaces of the present invention comprise semiconductor and dielectric regions formed in such a way that allows the wafer surface to wet so that residual particles can be removed therefrom during a wet clean. Each memory cell within the array which results from the process incorporates a stacked capacitor, a silicon nitride coated access transistor gate electrode, and a self-aligned high-aspect-ratio digit line contact having a tungsten plug which extends from the substrate to a metal interconnect structure located at a level above the stacked capacitor. A method of conditioning soil is further included.