A high voltage insulated gate field-effect transistor includes an insulated gate field-effect device structure having a source and a drain, the drain being formed with an extended well region having one or more buried layers of opposite conduction type sandwiched therein. In one embodiment, an optical filter may be operated in a sensitivity mode to thereby generate a white light image representative of a region of interest. The locking portion has a curved bottom surface and a smooth bottom surface. As a consequence, skew between the clock trees can be easily adjusted. For each amplitude that is greater than the predetermined threshold, information is recorded at the receiver relating to a burst noise event.