In order to implement a memory having a large storage capacity and a reduced data retention current, a non-volatile memory, an SRAM, a DRAM, and a control circuit are modularized into one package. A central axis of each of the second dummy patterns coincides with that of a corresponding one of the first dummy patterns in a direction perpendicular to the semiconductor substrate. Furthermore, techniques are also described in which, during the update of a grid in regions where there exists an embedded fine-grid, the field values at co-located edges at which fine-grid solution points exist on the grid, are summed and used in an approximation of the gradient term required for the FD-TD updating stencils to perform an electromagnetic simulation. The method also includes identifying at least one point of intersection in the images where the lines intersect on the sheet. The end product of septage and other biosolids treated using the process disclosed by the current invention can be sold as fertilizer, and utilized without any additional permits. In this structure, if portions of the gate wire or the data wire are disconnected, the portions overlapping the disconnected wire, the storage wire, and the redundant repair line are shorted to repair an open wire defect.