A method for fabricating a display device is provided. The highly integrated phase change memory device includes a semiconductor substrate having a cell area and a peripheral area with impurity regions formed in the cell area and extending in parallel to each other in a first direction to form a striped pattern. low voltage, and a self-oscillating control circuit of the switch for detecting the end of the demagnetization of an auxiliary winding of the transformer, to turn the switch on, and for detecting the current in the on-state switch to turn it off when this current reaches a reference point.