Methods for depositing flowable dielectric films using halogen-free precursors and catalysts on a substrate are provided herein. The method utilizes ceramic greensheets or silicon wafers. Flexible cables are soldered to these terminals, respectively. The at least one metal has a molar ratio with respect to ruthenium and iridium in the range from 0. Multiple layers of sections like the first conductive section and the second conductive section are stacked over each other and are connected to each other as part of the capacitor. The anti-twist member may be rotably mounted to the pivoting member.