In a method of forming an insulating structure, an insulating interlayer is formed on a substrate using a silicon source gas and a reaction gas. A mode specification table in a storage device contains mode specification information obtained by associating a job designated by a user. The insertion groove may have a sidewall at a third edge, which is adjacent the first edge, and may be open at a fourth edge, which is opposite the third edge. To switch the folder F1 to a folder F2, the user presses a down button of a cross key 27.