Provided are a non-volatile memory device and a method of fabricating the same. The metal ion in the higher oxidation state is reacted with hydrogen gas, an unsaturated hydrocarbon, andor a saturated hydrocarbon to form products. The coating structure of the flakes and foils includes a reflector layer, a dielectric layer on the reflector layer, and a titanium-containing absorber layer on the dielectric layer. The stopper includes a base member fixed to the placement member, a projection member having a projection extending higher than the placement surface, and a viscoelastic member connecting the base member and the projection member within the placement member.