A method of manufacturing a semiconductor device having damascene structures with air gaps is provided. The abatement tool monitors signals transmitted on the system bus between the host computer and the process tool, and signals received directly from the process tool. Structure is imposed on the LDPC codes by restricting portion part of the parity check matrix to be lower triangular andor satisfying other requirements such that the communication between bit nodes and check nodes of the decoder is simplified. Following completion of the first fracture injection, the fracture fluid is injected into the injection casing and opens a set of second and subsequent fracture initiation sections dilating the formation and initiating and propagating a second and subsequent vertical hydraulic fractures at different azimuths to the first and subsequent earlier installed fractures. A set of non-conductive pillars is disposed on and protrudes from the first surface of the first substrate. Then the SDR is forwarded to a rating engine, which expands said tags, calculates and adds charges.