A MOS transistor for high-speed operation includes a gate insulator formed over a semiconductor substrate and a gate formed over the gate insulator. In one embodiment, the system comprises a reactor for receipt of the fluid and the gas andor chemical for dissolving, mixing, diffusing, or infusing the gas andor chemical into the fluid, and a controller to control the flow of the fluid and the gas andor chemical into the reactor, and to monitor the operation of the system in accordance with predetermined operating conditions. A portion of the connection member highest from the substrate is lower than a portion of the sealing body highest from the substrate. The read-out lines have a line pitch relative to each other.