The manufacturing method of a nonvolatile memory and its structure is achieved by building a gate dielectric layer on a base. The actuation heating element is on and spaced in from an outer periphery of the flexible membrane. Consequently, the pitch of the contacting portions of the star roller owing to two star wheels can be made substantially half, and a thickness of each contacting portion can be made thinner, and a top end of each contacting portion can be shaped acute.