Manufacturing-friendly and scalable methods for the production of silicon micro- and nanostructures, including silicon nanotubes, are described. Each tuning network comprises a set of inductors that enables a broadband response while reducing the loading effect of the feedback amplifier. In some embodiments, a memory device may include a temperature sensor operably coupled to a mode register. Even if ink flows backward from the ink storage chamber, it is stored in an ink storage space, thus preventing the clogging of an air passage.