A method for forming a shielded gate field effect transistor includes forming a plurality of trenches in a semiconductor region and forming a shield electrode in a bottom portion of each trench. A light emitting device is provided, and nanoparticles are dispensed in-situ in at least one of a defect-controlling layer, an n-type layer, a p-type layer, and a quantum well of the light emitting device. A second level of voltage is applied to the coil to enable a second surface interface having a second coefficient of friction that is greater than the first coefficient of friction and to generate a second haptic effect by varying the voltage. Various features of the methods and apparatus are disclosed.