Various technologies and techniques are disclosed for implementing retrying transactions in a transactional memory system. The gate metal structure includes: a substrate and a copper metal layer; and a barrier layer disposed between the substrate and the copper metal layer, the barrier layer being formed of silicon oxynitride SiON or silicon oxide SiOx. One of the links is used to react against the entire torque applied to the handle, regardless of the pivotal position of the handle. The system further includes a plurality of crash sensors connected to the communication bus for communicating with the control unit.