A method is described for forming an n-MOSFET with a fully silicided Hf suicide gate electrode that has a work function essentially the same as n+ polysilicon. A set of classes associated with a program to be analyzed is identified. In the disengagement position, the drive housing is displaceable on the drive holder in an adjustment direction such that it is possible to adjust a tooth-flank clearance between the drive pinion and the gearwheel element. an available frequency band, are divided into a plurality of comparatively small radio resource units.