A method of forming a semiconductor device, includes forming a metal-back-gate over a substrate and a metal back-gate, forming a passivation layer on the metal back-gate to prevent the metal back-gate from reacting with radical species, and providing an intermediate gluing layer between the substrate and the metal back-gate to enhance adhesion. In operation, the open framework rotates in free air to promote heat exchange. There may be one or plural atomic groups B\u2014SO3\u2014 bound to an atomic group A. This assumes that the black printing station is the \u201clast\u201d station along the travel of the intermediate transfer member.