In a circuit configuration comprising an n-channel thin-film transistor and a p-channel thin-film transistor integrally produced on a single substrate, a lightly-doped drain region is formed selectively in the n-channel thin-film transistor, and damages to semiconductor layers caused when implanting impurity ions are balanced between the n- and p-channel thin-film transistors. A fine mesh conductive screen is disposed inside the vaporizing chamber for generation of heat through electrical resistance. In addition, the method includes, if at least one of the measurements is valid, generating a final measurement of the analog signal based on the at least one valid measurement. The classification of variables andor corresponding response functions per the prediction model may consider dependencies between variables and dependencies between successive states.