In a high voltage MOS transistor, in a portion immediately below the gate electrode, peaks of concentration distribution in depth direction of a first conductivity type impurity and a second conductivity type impurity in the drain offset region are in the same depth, the second conductivity type impurity being higher concentrated than the first conductivity type impurity. The silicon-backed microdisplay includes a silicon die, a silicon-side conductive layer disposed on the silicon die, and a silicon-side passivation layer arranged on the silicon-side conductive layer. Owing to the recorded group management information, a user can easily and rapidly find many still pictures on a recording medium that have been obtained in the same photographing condition. The code is executed to determine an identifier of a highlight object based on an identifier of the event capture object. The access device and the second concentrator device cooperate to form a second virtual channel for allowing data traffic to flow from the customer network to the carrier network and from the carrier network to the customer network and wherein the second virtual channel is a backup communication channel for the customer network. At least several groups of actuators are individually controllable by the controller and to each actuator or each group of actuators is assigned at least one memory storage unit, which can store at least one parameter for controlling one or more actuators.