1460749157-7b86df0a-35c9-47b4-81b2-30360023e107

A trench MOS device includes a base semiconductor substrate, an epitaxial layer grown on the base semiconductor substrate, a first trench in the epitaxial layer, and a stepped trench comprising a second trench and a third trench in the epitaxial layer. The nutrient medium has a fluidity such that at least some of the flowable or semi-solid component containing the carbohydrate nutrient remains in contact with the embryos or germinant at least until the embryo or germinant establishes vigorous growth under environmental conditions effective for such growth. Initially, both positive and negative sync pattern correlations are accorded equal weight, with the non sync pattern correlations being accorded a negative weight. Switching between two input signals is controlled by a state machine which first intransparently switches the signal latch after a change of the external configuration signal, then switches the multiplexer and transparently switches the signal latch again after the multiplexer output has changed at least once and assumed the value stored in the signal latch. In performance verification or connection verification of a target to be verified, the speed converting apparatus can vary a load of a request issued to the target to be verified on the target or a load issued to a verification device on the verification device, while absorbing a difference in operation speed between the target to be verified and the verification device.