An electronic device has a host processor system having an AT Attachment mass storage interface having a single channel. A gate of the GaN FET is electrically coupled to a source of the NMOS transistor through a gate network. One or more rounded, strain-relieving cutouts are located on the palm portion at a location corresponding to the area of a user’s hand where two adjacent fingers connect with the palm. The insulating resin layer is formed of a material that develops plastic flow when pressurized.