1460768059-f7152567-8844-4e66-9135-087298daf626

Provided is an HEMT exhibiting a normally-off characteristic and low on-state resistance, which includes a first carrier transport layer; two separate second carrier transport layers formed of undoped GaN and provided on two separate regions of the first carrier transport layer; and carrier supply layers formed of AlGaN and respectively provided on the two separate second carrier transport layers. Free radical polymerization is used in the synthesis of the polymers. Methods of using such compositions for the treatment or prevention of systemic and local fungal, yeast, and dermatophyte infections are also provided. The projectile is positioned within the case.