The present disclosure relates to a method of generating a transistor device having an epitaxial layer disposed over a recessed active region. A jetting fluid comprising an aqueous base fluid is introduced into a subterranean formation to create or enhance at least one fracture therein. Said injection is carried out at a pressure ranging from 1 to 1000 bars and in conformity with a volume flow rate ranging from 5 to 500 lh, thereby producing the vertex mixing of a liquid phase with a material modification, and continuously extracting said liquid phase from the vertex chamber through a removing hole, the material modification being obtained . Bonding compositions can be prepared by mixing the polymerizable composition of the kit with the respective initiator component.