Oxidation methods and resulting structures comprising providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. In order to achieve a contacting system that can be manufactured inexpensively but can nevertheless carry high current densities, a connecting device is proposed whose contact region is embodied in structured fashion and flexibly with respect to stresses that extend in a terminal plane parallel to the terminal region. As such, unnecessary channel formation under the silicon oxide film, when a voltage higher than a threshold voltage is applied to the substrate, is prevented by forming a thick silicon oxide film on the substrate on which no protruding fins are formed.