A MOS technology power device includes a semiconductor material layer of a first conductivity type, a conductive insulated gate layer covering the semiconductor material layer, and a plurality of elementary functional units. The device receives data communicated from a transmitting device. Molecular moieties of interest may be attached through cleavable sites. If these two conditions are met, the remainder R of N mod D is determined by summing the upper n2and lower n2bits of the dividend N.