A ball grid array semiconductor device has a wiring substrate, a semiconductor chip disposed on one surface side of the wiring substrate, and a bump arrangement as external terminals disposed on a surface side, opposite to the one surface side, of the wiring substrate. The high-voltage transistor includes a drain region, source region, tap region, drift region, and tap drift region, all of a first conductivity type. The method further comprises a step of determining a differential delay of a link from the propagation delay of the link and a propagation delay of a reference link. Applications include analog pointers, pressure sensors and microphones.