One embodiment of the present invention provides a system that dynamically adjusts the aggressiveness of an execute-ahead processor. The die-stacked memory device includes a set of one or more stacked memory dies and a set of one or more logic dies. The number of pits having a depth of or more of the minimum recording bit length present on a surface of said magnetic layer is equal to or less than 10010000 m2, and the center surface average roughness of said magnetic layer surface SRa is equal to or less than 6. After the grinding is finished, the semiconductor wafer held with the rear face up is diced into semiconductor chips. In response to restarting the process, the first task and the at least second task are restarted using the checkpoint data in the checkpoint file. 5 mm from the inside surface of the container under the wiper member in a storage position or while the applicator is being withdrawn along the longitudinal axis of the container.