A protective structure for blocking the propagation of defects generated in a semiconductor device is disclosed. The apparatus includes a heat dissipating member composed of metal and having a plurality of fins on a first side of the heat dissipating member. The exposed portions of the sacrificial layer are etched to remove the exposed portions of the sacrificial layer and expose portions of the gate electrode layer. The second abbreviated term satisfies a matching criterion associated with the first abbreviated term. Preferably the step of allowing a network user to click-to-dial a mobile caller by using a network account is performed by providing an open application program interface between the application content provider and a call session control function. The active layer has exposed lateral edges wherein the N atoms are substituted by the As atoms at the exposed lateral edges by an annealing process conducted in a AsH3 atmosphere.