A light-emitting device of a top-emission type maintains a stable emission efficiency without leakage current consists of a substrate, a lower electrode, an organic layer which includes at least an emission layer, and a transparent upper electrode provided on the organic layer, which are sequentially formed on top of the other. The thin film transistor includes a source electrode andor a drain electrode. Further, an N-type region having a concentration from 31016cm3 to 11022cm3 is provided near a buried oxide film under the drain electrode. A diameter regulator receives an output signal from the sensor as an actual parameter value and compares it to a predetermined target value. The antenna may include at least one of copper, aluminum, palladium-covered copper, and aluminum-covered copper wire or ribbon.