A semiconductor device may include a first source layer, a first insulating layer located over the first source layer, and a first stacked structure located over the first insulating layer. A connector is fastened to the belt for operation by the person while wearing the belt. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained. At the behest of the human network administrator, the Web server instructs the gateway to make specified changes to the sensor. Each block may be placed such that its front wall rests on the rear wall of the course of blocks below it.