The present invention is an organoruthenium compound for use in production of a ruthenium or ruthenium compound thin film by chemical vapor deposition, including ruthenium and an arene group and norbornadiene both coordinated to the ruthenium and represented by the following formula. In addition, primary elementary stream data can be handled by separate primary elementary stream parsers based upon the packet identifier of the primary elementary stream. The first transceiver may communicate received, detected, andor decoded information to a different transceiver in the same first wireless device, thus enabling the collocated transceivers to work in concert efficiently. Each dummy cell of the plurality of FeRAM dummy cells is selectively coupleable to a plurality of bitlines.