The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. A columnar member is provided overlapped on the IC pressurizing member so as to bring an external surface thereof into contact within the groove of the IC pressurizing member. One or more secondary oxide compounds comprising oxides of secondary elements not present in conventional alloys of the substrate metals at significant levels are added to the first oxide coating. The gas storage system presented is distributed over multiple storage units coupled to a gas flow network for control storage and use of the compressed gas.