Etch block layers having an etching rate smaller than that of a first semiconductor forming a semiconductor substrate are formed on the sidewalls of device isolation grooves by applying oblique ion implantation of Ox, N, or C to the semiconductor substrate including the first semiconductor. In disclosed embodiment, the one or more chambers may be provided and the electronics can include a battery, a sensor, a transmitter, an antenna and connecting wires. The insulators in a motor stator in another implementation are provided with a first partition and a second partition that, relative to the axial center of the plurality of teeth, respectively cover one side and the other side each tooth. Normally, the rolled wrap can be freely rotated and outward pulled for packaging an article, and when the holding-down plate is depressed to push the sleeve portion against the collar, the rolled wrap is held in place and a user may tensely stretch the outward pulled wrap to smoothly and firmly wrap the article.