An electric power supply platform made up of an upper conductive layer, a lower conductive layer, and a non-conductive insulating layer sandwiched between the conductive layers,. An exemplary semiconductor device structure includes a first vertical drift region of semiconductor material, a second vertical drift region of semiconductor material, and a buried lateral drift region of semiconductor material that abuts the vertical drift regions. The annotations are essentially parameters for a function\u2014i. Immediately before widening in respective manifolds, the extra thermoplastic resin is introduced to each edge part of each of the objective thermoplastic resins. Furthermore, this circuit is compatible with depletion mode FET processes having a single fixed threshold voltage. The thick end portion has a groove on its outer surface.