A method to form a strain-inducing semiconductor region comprising three or more species of charge-neutral lattice-forming atoms is described. The present invention also provides mounts for a shock absorbing device and a shock absorbing system employing the shock absorbing device of the present invention. Next, a credentialing service supplies a randomly generated credential to the client and the server unbeknownst to the principal. Loading forces generated by applied decompressive energy and the resulting forces generated between the interior of the vessel and the treated tissue which the vessel encompasses are diffused.