A tiny tunnel oxide window with dimensions smaller than the minimum feature resolution of the process equipment is formed in an EEPROM structure by placing dummy nitride spacers on either side of a nitride implant mask over a gate oxide layer after source and drain are formed by implantation at opposed sides of the nitride mask. The bond core can be a fluoropolymer film or a fluoropolymer prepreg, having at least one etched or Corona discharge treated surface. The connector device ensures a high degree of wire position control through the use of wire retention combs andor registration holes. The cost of the measuring or analyzing apparatus is charged according to the using condition through the internet, i. Thereby, a semiconductor device which can receive light in a mid-infrared range and has a low dark current is provided. The coupling member has a substantially U-shaped form and comprises: a base and two facing lateral walls which originate from the base.