A flash memory device includes trenches that are formed at regions on a semiconductor substrate spaced apart from one another at predetermined distances, buried floating gates buried into the trenches, a plurality of isolation structures formed between the buried floating gates, and a dielectric film and a control gate formed on the buried floating gates. In the linear lighting device, the light guide has a plurality of grooves arranged in the longitudinal direction of the light guide, and has a stepped cutout at the other end on an opposite side from the end, and a protruding portion protruding into the cutout is formed on an inner surface of the case which faces the cutout. temperature and 300-3,000 psig pressure. A power supply connection section selects one of the power supply sections based on the value of the voltage applied to the load or the voltage value of the target voltage waveform and connects the selected power supply section to the load and disconnects the rest of the power supply sections from the load.