A semiconductor device for an integrated injection logic cell having a pnp bipolar transistor structure formed on a semiconductor substrate, wherein at least one layer of insulating films formed on a base region of the pnp bipolar transistor structure is comprised of a silicon nitride film. A patterned sacrificial layer is formed on a substrate. Protective covering can be made of any material that is sufficient to stop or impede the nail’s momentum. The strainer is operably disposed within the flow tube to filter out entrained solid material within a stream of water flowing through the flow tube.