In a vertical power semiconductor device having the super junction structure both in a device section and a terminal section, an n-type impurity layer is formed on the outer peripheral surface in the super junction structure. The auxiliary cam element automatically recovers any play that is generated owing to wear of the chain and prevents a movement of the chain-tensioning sprocket wheel in a direction opposite to the tensioning direction. The second and third sites are remotely located from the first site with the second site being nearby the first site. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The composite plate can also comprise an articulation plate pivotally coupled to at least one of the first plate segment and the second plate segment via a pivot andor a slot and pin engagement. A server computer is coupled to the plurality of electronic player interaction areas and the database for administering the electronic card game using electronic cards and electronic chips.