A nitride semiconductor laser diode includes: a substrate made of silicon in which a plane orientation of a principal surface is a {100} plane; and a semiconductor that includes a plurality of semiconductor layers formed on the substrate and including an active layer, each of the plurality of semiconductor layers being made of group III nitride. In one embodiment, systems and devices are provided for moving an end effector on a distal end of a surgical fastening device. Some applications include automotive electronics and audio systems generally. The street side systems are in communication with the customer facing systems. A focusing method adjusts the position of a first lens, in order from the object side, relative to that of a second lens which is nearest the image side.