A memory device may include a source region and a drain region formed in a substrate and a channel region formed in the substrate between the source and drain regions. The turn signal has base having a recess and a turn light. 0 voltage equipment, which contains 2 to 20 wt % of fine particles having a particle size of 100 nm or less and contains a nonion surfactant having an HLB value of 2 to 8, and a high voltage equipment including the hybridized insulating resin material. A light path changing member changes a light path so that light entering the light combining member avoids the joining center.