Embodiments of the present invention include a method for manufacturing a semiconductor device and a semiconductor device, in which, when a DRAM and a MOS field effect transistor that becomes a component of a logic circuit are mix-mounted on the same chip, the DRAM and the MOS field effect transistor can be provided with designed performances. for holding the solid-solute state of AlN is maintained, hot rolling the bar, and rapidly cooling it to make fine AlN precipitate and thereby efficiently an inexpensively produce high flux density grain-oriented silicon steel sheet without any high temperature heating of the bar. The cable has a proximal end and a distal end. For signal flow through the first amplification path, the first amplification path is biased-on and the second path is biased-off. A kit comprising a container, a cap, a pierceable layer; and means for coupling the pierceable layer to the cap andor to the container is also provided.