A process for fabricating a novel random access memory capacitor in a shallow trench isolation The method utilizes a novel node photoresist mask for plasma etching recesses in the STI that prevents plasma-etch-induced defects in the substrate. The signal CLK is used to latch a first address for the first operation and a second address for the second operation. A diaphragm 130 sandwiched between a rising portion 121 of a lid 120 and an end 110\u2032c of the tube member 110 and defining a gas charge chamber 122 is displaced, the movement of which is transmitted to a shaft member 150. In another embodiment seeds are planted with gel.