A method is described to form a MOSFET with a fully silicided gate electrode and fully silicided, raised SD elements that are nearly coplanar to allow a wider process margin when forming contacts to silicided regions. The inducer of IFN-\u03b3 can be an IL-12 molecule, and the chemotherapeutic agent can be an antibiotic. 3 and 5, and wherein the average bilayer planar equivalent thickness of the first and second layers is less than 100 \u212b. The first storage subsystem 100A generates a data set, stores the generated data set in the second storage devices 6A2, 6A3, and transmits the data set to the second and third storage subsystems 100B, 100C. The substrate has a wall surface defining the opening portion and formed such that the opening portion is partially partitioned and the electronic devices are kept from making contact with each other.