A semiconductor memory structure having a feature size of less than about 90 nm which exhibits little or no dynamic charge loss and little or no trap assisted junction leakage is provided. The power converter is capable of converting direct current input power as well as alternating current input power into direct current output power available for use to power an electrical load device, such as a consumer electronic device. In a preferred embodiment, the present invention identifies compatible matches for communities and companies. The nonvolatile memory device is configured with the phase change resistor cell, and voltages applied to a word line and a bit line are controlled to read and write data.