A SIMOX wafer is produced at an oxygen ion implantation step and a high-temperature annealing step, wherein an oxide film is formed on a surface of a wafer prior to the oxygen ion implantation and then the oxygen ion implantation is conducted through the oxide film. 75 cm in diameter; attractive golden yellow-colored inflorescences; response time about 61 days; dark green foliage; strong and thick stems; and excellent postproduction longevity with inflorescences maintaining good substance and color for about three to four weeks in an interior environment. The drying apparatus comprises an absorber for drying and a heating device for heating a gas flowing therethrough and is connected to a solar cell via a connection, so that the dried gas is conducted into the solar cell. An image of an object is captured, a virtual light source illuminates the object within the image. A detection device is provided which includes an analyzer unit and a data transmission device, the analyzer unit being designed to detect the position of the locking element and the data transmission device being designed to transmit the determined position of the locking element. Implementations may achieve an \u201ceven\u201d amount of noise reduction at each pixel while preserving as much picture detail as possible by, for example, averaging each pixel with a constant number, N, of temporally andor spatially correlated pixels.