High side extended-drain MOS driver transistors are presented in which an extended drain is separated from a first buried layer by a second buried layer, wherein an internal or external diode is coupled between the first buried layer and the extended drain to increase the breakdown voltage. An example of a method includes receiving a backup job from a client for data on a plurality of virtualized storage nodes presented to the client as a single object. The temperature of the flow of fuel is increased to a predetermined temperature. A first disk received into the socket is riveted to the sleeve and to a metallic ribbon. An outer peripheral surface of the intermediate cylindrical tube and an inner peripheral surface of the cap come in air-tight contact with each other.