A dielectric layer containing an atomic layer deposited titanium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. The plurality of segments includes a respective segment for each processor having a coupling unit connected to a trace port of the processor. The present disclosure relates to effective means of distributing the pumping load in a manner that satisfies the process requirements while keeping the pumping machinery safe from functioning in damaging operating regions.